| IPB200N25N3GATMA1 | ||
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| Product description : Single N-Channel 250 V 20 mOhm 64 nC OptiMOS™ Power Mosfet - D2PAK | ||
| SPQ：1000 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
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| Packaging: | Reel |
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| Qg - Gate Charge: | 86 nC |
| Pd - Power Dissipation: | 300 W |
| Tradename: | OptiMOS |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 12 ns |
| Forward Transconductance - Min: | 61 S |
| Series: | XPB200N25 |
| Factory Pack Quantity: | 1000 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 45 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 17.5 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-263-3 |
| Configuration: | 1 N-Channel |
| Unit Weight: | 0.139332 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 18 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | G IPB200N25N3 IPB200N25N3GXT SP000677896 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 64 A |
| Rise Time: | 20 ns |
| Maximum Operating Temperature: | + 175 C |
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