BSC160N10NS3GATMA1 | ||
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产品描述:
Single N-Channel 100 V 33 mOhm 25 nC OptiMOS™ Power Mosfet - TDSON-8
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标准包装:1 | ||
数据手册: -- |
FET Feature | Standard |
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Package / Case | 8-PowerTDFN |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta), 42A (Tc) |
Part Status | Active |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Vgs(th) (Max) @ Id | 3.5V @ 33µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Packaging | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 33A, 10V |
Power - Max | 60W |
Supplier Device Package | PG-TDSON-8 |
Gate Charge (Qg) @ Vgs | 25nC @ 10V |
Category | Discrete Semiconductor Products |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | Transistors - FETs, MOSFETs - Single |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) @ Vds | 1700pF @ 50V |
ECCN | EAR99 |
请输入下方图片中的验证码: