2N3055G specifications -Ameya360 electronic components purchase network


2N3055G

ACTIVE EAR99
Product description : 2N Series NPN 115 W 60 V 15 A Flange Mount Power Transistor - TO-3
SPQ：1
Datasheet : 2N3055G.pdf
ECAD Model:

Width:	26.67 mm (Max)
Emitter- Base Voltage VEBO:	7 V
Collector- Base Voltage VCBO:	100 V
DC Collector/Base Gain hfe Min:	20
Series:	2N3055
Minimum Operating Temperature:	- 65 C
Factory Pack Quantity:	100
RoHS:	Details
Product Category:	Bipolar Transistors - BJT
Gain Bandwidth Product fT:	2.5 MHz
Configuration:	Single
Maximum Operating Temperature:	+ 150 C
Maximum DC Collector Current:	15 A
Packaging:	Tray
Length:	39.37 mm
Manufacturer:	ON Semiconductor
Pd - Power Dissipation:	115000 mW
Transistor Polarity:	NPN
Brand:	ON Semiconductor
Package / Case:	TO-204-2 (TO-3)
Collector- Emitter Voltage VCEO Max:	60 V
Height:	8.51 mm (Max)
Mounting Style:	Through Hole
ECCN	EAR99

Datasheet： 2N3055G.pdf

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Stock code :	322598
Mfg name :	onsemi
MPN :	2N3055G
Product description :	2N Series NPN 115 W 60 V 15 A Flange Mount Power Transistor - TO-3

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