IRL1104LPBF
  • ACTIVE
  • TO-262
  • EAR99
Product description : Single N-Channel 40 V 0.008 Ohm 68 nC HEXFET® Power Mosfet - TO-262-3
SPQ:50
Datasheet : --
ECAD Model:
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FET Feature Logic Level Gate
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 104A (Tc)
Gate Charge (Qg) @ Vgs 68nC @ 4.5V
Packaging   Tube  
Series HEXFET®
Vgs(th) (Max) @ Id 1V @ 250µA
Input Capacitance (Ciss) @ Vds 3445pF @ 25V
Rds On (Max) @ Id, Vgs 8 mOhm @ 62A, 10V
Power - Max 2.4W
Supplier Device Package TO-262
Standard Package   50
Product Training Modules Discrete Power MOSFETs 40V and Below
FET Type MOSFET N-Channel, Metal Oxide
Family FETs - Single
Mounting Type Through Hole
ECCN EAR99
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