IRFHM792TRPBF specifications -Ameya360 electronic components purchase network


IRFHM792TRPBF

ACTIVE 8-PQFN (3.3x3.3), Power33 EAR99
Product description : MOSFET 2N-CH 100V 2.3A 8PQFN
SPQ：1
Datasheet : IRFHM792TRPBF.pdf
ECAD Model:

FET Feature	Standard
Package / Case	8-PowerVDFN
Power - Max	2.3W
Supplier Device Package	8-PQFN (3.3x3.3), Power33
Gate Charge (Qg) @ Vgs	6.3nC @ 10V
Product Training Modules	High Voltage Integrated Circuits (HVIC Gate Drivers)
FET Type	2 N-Channel (Dual)
Series	HEXFET庐
Vgs(th) (Max) @ Id	4V @ 10碌A
Input Capacitance (Ciss) @ Vds	251pF @ 25V
Rds On (Max) @ Id, Vgs	195 mOhm @ 2.9A, 10V
PCN Assembly/Origin	IRFHM792TR(1)PBF,62-0217PBF Site 19/Jul/2013 Assembly Site 19/Jul/2013 Mosfet Backend Wafer Processing 23/Oct/2013
Drain to Source Voltage (Vdss)	100V
Standard Package	4,000
Current - Continuous Drain (Id) @ 25掳C	2.3A
Packaging	Tape & Reel (TR)
Design Resources	IRFHM792TR2PBF Saber Model IRFHM792TR2PBF Spice Model
Family	FETs - Arrays
Mounting Type	Surface Mount
ECCN	EAR99

Datasheet： IRFHM792TRPBF.pdf

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