CSD16401Q5
  • ACTIVE
  • 8-SON
Product description : MOSFET N-CH 25V 100A 8-SON
SPQ:2500
Datasheet : CSD16401Q5.pdf
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PCN Assembly/Origin Qualification Assembly/Test Site 03/Mar/2014 Qualification Wire Bond 27/May/2014
Product Training Modules NexFET MOSFET Technology
Design Resources Create your power design now with TI’s WEBENCH® Designer
Mounting Type Surface Mount
FET Feature Logic Level Gate
Package / Case 8-TDFN Exposed Pad
Supplier Device Package 8-SON
Gate Charge (Qg) @ Vgs 29nC @ 4.5V
FET Type MOSFET N-Channel, Metal Oxide
Series NexFET™
Input Capacitance (Ciss) @ Vds 4100pF @ 12.5V
Power - Max 3.1W
Video File NexFET Power Block PowerStack™ Packaging Technology Overview
Vgs(th) (Max) @ Id 1.9V @ 250µA
Packaging Cut Tape (CT)  
Rds On (Max) @ Id, Vgs 1.6 mOhm @ 40A, 10V
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 38A (Ta), 100A (Tc)
PCN Design/Specification Qualification Revision A 01/Jul/2014
Online Catalog N-Channel Logic Level Gate FETs
Family FETs - Single
RoHS Lead free / RoHS Compliant
Datasheet: CSD16401Q5.pdf
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