IRLD014PBF
  • ACTIVE
  • 4-DIP, Hexdip, HVMDIP
Product description : Single N-Channel 60 V 0.2 Ohms Through Hole Power Mosfet - HVMDIP-4
SPQ:1
Datasheet : --
ECAD Model:
  • Specifications
  • Product Attributes
  • Documents
  • Product reviews
FET Feature Logic Level Gate
Package / Case 4-DIP (0.300", 7.62mm)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta)
Gate Charge (Qg) @ Vgs 8.4nC @ 5V
Online Catalog N-Channel Logic Level Gate FETs
Mounting Type Through Hole
Input Capacitance (Ciss) @ Vds 400pF @ 25V
RoHS Lead free / RoHS Compliant
Rds On (Max) @ Id, Vgs 200 mOhm @ 1A, 5V
Power - Max 1.3W
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Catalog Drawings IR(F,L)D Series Side 1 IR(F,L)D Series Side 2
FET Type MOSFET N-Channel, Metal Oxide
Family FETs - Single
Vgs(th) (Max) @ Id 2V @ 250µA
Packaging Tube  
You can comment after logging in.