IRF7341TRPBF
  • ACTIVE
  • 8-SO
Product description : 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
SPQ:4000
Datasheet :
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FET Feature Logic Level Gate
Package / Case 8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 4.7A
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Online Catalog N-Channel Logic Level Gate FETs
Family FETs - Arrays
Vgs(th) (Max) @ Id 1V @ 250µA
Packaging Cut Tape (CT)  
Rds On (Max) @ Id, Vgs 50 mOhm @ 4.7A, 10V
Power - Max 2W
Supplier Device Package 8-SO
Gate Charge (Qg) @ Vgs 36nC @ 10V
FET Type 2 N-Channel (Dual)
Series HEXFET®
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 740pF @ 25V
RoHS Lead free / RoHS Compliant
Datasheet:
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