Qg - Gate Charge: | 3.5 nC |
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Packaging: | Reel |
Pd - Power Dissipation: | 19 W |
Tradename: | TrenchFET |
Height: | 0.75 mm |
Configuration: | Single |
Vgs - Gate-Source Voltage: | 3 V |
Length: | 2.05 mm |
Series: | SIA |
Factory Pack Quantity: | 3000 |
RoHS: | Details |
Id - Continuous Drain Current: | 11.3 A |
Transistor Type: | 1 N-Channel |
Rds On - Drain-Source Resistance: | 83 mOhms |
Width: | 2.05 mm |
Technology: | Si |
Package / Case: | SC-70-6 |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Manufacturer: | Vishay |
Transistor Polarity: | N-Channel |
Brand: | Vishay Semiconductors |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 100 V |
ECCN | EAR99 |
数据手册: |
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