SIA416DJ-T1-GE3
  • 量产中
  • EAR99
产品描述:
N-Channel 100 V 83 mOhm 3.5 W TrenchFET Power Mosfet - PowerPAK SC-70-6L
标准包装:1
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Qg - Gate Charge: 3.5 nC
Packaging: Reel
Pd - Power Dissipation: 19 W
Tradename: TrenchFET
Height: 0.75 mm
Configuration: Single
Vgs - Gate-Source Voltage: 3 V
Length: 2.05 mm
Series: SIA
Factory Pack Quantity: 3000
RoHS:  Details
Id - Continuous Drain Current: 11.3 A
Transistor Type: 1 N-Channel
Rds On - Drain-Source Resistance: 83 mOhms
Width: 2.05 mm
Technology: Si
Package / Case: SC-70-6
Vgs th - Gate-Source Threshold Voltage: 3 V
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Manufacturer: Vishay
Transistor Polarity: N-Channel
Brand: Vishay Semiconductors
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 100 V
ECCN EAR99
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