| SI6415DQ-T1-GE3 | ||
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| 产品描述：
P-Channel 30 V 19 mΩ 47 nC SMT TrenchFET® Power Mosfet - TSSOP-8
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| 标准包装：1 | ||
| 数据手册： -- | ||
| ECAD模型:
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| Minimum Operating Temperature: | - 55 C |
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| Packaging: | Reel |
| Product: | MOSFET Small Signal |
| Technology: | Si |
| Package / Case: | TSSOP-8 |
| Configuration: | Single |
| Unit Weight: | 0.005573 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 16 ns |
| Manufacturer: | Vishay |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | SI6415DQ-GE3 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 6.5 A |
| Rise Time: | 17 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 19 mOhms |
| Width: | 4.4 mm |
| Pd - Power Dissipation: | 1.5 W |
| Tradename: | TrenchFET |
| Height: | 1 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 17 ns |
| Length: | 3 mm |
| Series: | SI6 |
| Factory Pack Quantity: | 3000 |
| Brand: | Vishay Semiconductors |
| Typical Turn-Off Delay Time: | 73 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 30 V |
| Transistor Type: | 1 P-Channel |
| ECCN | EAR99 |
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