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| 产品描述：
Single N-Channel 30 V 2.8 mOhm 66 nC HEXFET® Power Mosfet - SOIC-8
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
- 产品特性
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Power - Max | 2.5W |
| Supplier Device Package | 8-SO |
| Gate Charge (Qg) @ Vgs | 66nC @ 4.5V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Family | FETs - Single |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Packaging | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 2.8 mOhm @ 24A, 10V |
| PCN Assembly/Origin | Backend Wafer Transfer 23/Oct/2013 |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta) |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below |
| Design Resources | IRF8788PBF Saber Model IRF8788PBF Spice Model |
| Series | HEXFET® |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 5720pF @ 15V |
| RoHS | Lead free / RoHS Compliant |
| 数据手册： |
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