IRF520NPBF
  • ACTIVE
  • EAR99
Product description : Single N-Channel 100 V 0.2 Ohm 25 nC HEXFET® Power Mosfet - TO-220-3
SPQ:50
Datasheet :
ECAD Model:
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Qg - Gate Charge: 16.7 nC
Packaging: Tube
Manufacturer: Infineon
Transistor Polarity: N-Channel
Technology: Si
RoHS:  Details
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 100 V
Unit Weight: 0.211644 oz
Mounting Style: Through Hole
Rds On - Drain-Source Resistance: 200 mOhms
Number of Channels: 1 Channel
Pd - Power Dissipation: 48 W
Factory Pack Quantity: 50
Brand: Infineon Technologies
Package / Case: TO-220-3
Id - Continuous Drain Current: 9.7 A
Vgs - Gate-Source Voltage: 20 V
Transistor Type: 1 N-Channel
ECCN EAR99
Datasheet:
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