| STGE200NB60S | ||
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| 产品描述：
STGE200NB60S Series N-Channel 600 V 200 A Low Drop PowerMESH IGBT - ISOTOP
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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| Length: | 38.2 mm |
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| Width: | 25.5 mm |
| Manufacturer: | STMicroelectronics |
| Pd - Power Dissipation: | 600 W |
| Continuous Collector Current at 25 C: | 200 A |
| Brand: | STMicroelectronics |
| Package / Case: | ISOTOP-4 |
| Product Category: | IGBT Modules |
| Height: | 9.1 mm |
| Unit Weight: | 1 oz |
| Maximum Gate Emitter Voltage: | +/- 20 V |
| ECCN | EAR99 |
| Packaging: | Tube |
| Collector-Emitter Saturation Voltage: | 1.2 V |
| Series: | 600-650V IGBTs |
| Minimum Operating Temperature: | - 55 C |
| Factory Pack Quantity: | 10 |
| RoHS: | Details |
| Gate-Emitter Leakage Current: | +/- 100 nA |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Configuration: | Single Dual Emitter |
| Mounting Style: | Through Hole |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
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