Rds On - Drain-Source Resistance: | 195 mOhms |
---|---|
Width: | 3.05 mm |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Package / Case: | PowerPak1212-8 |
Configuration: | Dual |
Mounting Style: | SMD/SMT |
Fall Time: | 11 ns |
Length: | 3.05 mm |
Series: | SI7 |
Factory Pack Quantity: | 3000 |
Brand: | Vishay Semiconductors |
Typical Turn-Off Delay Time: | 8 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Transistor Type: | 2 N-Channel |
ECCN | EAR99 |
Packaging: | Reel |
Product: | MOSFET Small Signal |
Pd - Power Dissipation: | 1.3 W |
Tradename: | TrenchFET |
Height: | 1.04 mm |
Vgs - Gate-Source Voltage: | 20 V |
Number of Channels: | 2 Channel |
Typical Turn-On Delay Time: | 7 ns |
Manufacturer: | Vishay |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Part # Aliases: | SI7922DN-GE3 |
RoHS: | Details |
Id - Continuous Drain Current: | 1.8 A |
Rise Time: | 11 ns |
Maximum Operating Temperature: | + 150 C |