SI7922DN-T1-GE3
  • 量产中
  • EAR99
产品描述:
Dual N-Channel 100 V 0.195 Ohm Surface Mount Power MosFet - PowerPAK-1212-8
标准包装:3000
数据手册: --
ECAD模型:
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Rds On - Drain-Source Resistance: 195 mOhms
Width: 3.05 mm
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: PowerPak1212-8
Configuration: Dual
Mounting Style: SMD/SMT
Fall Time: 11 ns
Length: 3.05 mm
Series: SI7
Factory Pack Quantity: 3000
Brand: Vishay Semiconductors
Typical Turn-Off Delay Time: 8 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 100 V
Transistor Type: 2 N-Channel
ECCN EAR99
Packaging: Reel
Product: MOSFET Small Signal
Pd - Power Dissipation: 1.3 W
Tradename: TrenchFET
Height: 1.04 mm
Vgs - Gate-Source Voltage: 20 V
Number of Channels: 2 Channel
Typical Turn-On Delay Time: 7 ns
Manufacturer: Vishay
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: SI7922DN-GE3
RoHS:  Details
Id - Continuous Drain Current: 1.8 A
Rise Time: 11 ns
Maximum Operating Temperature: + 150 C
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