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| 产品描述：
Single N-Channel 200 V 0.235 Ohm 38 nC HEXFET® Power Mosfet - IPAK
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| 标准包装：3000 | ||
| 数据手册： | ||
| ECAD模型:
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| Power - Max | 110W |
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| Rds On (Max) @ Id, Vgs | 235 mOhm @ 8A, 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| FET Feature | Standard |
| Supplier Device Package | IPAK (TO-251) |
| Gate Charge (Qg) @ Vgs | 38nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 830pF @ 25V |
| ECCN | EAR99 |
| 数据手册： |
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