IRFU13N20DPBF
  • ACTIVE
  • IPAK (TO-251)
  • EAR99
Product description : Single N-Channel 200 V 0.235 Ohm 38 nC HEXFET® Power Mosfet - IPAK
SPQ:3000
Datasheet :
ECAD Model:
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Power - Max 110W
Rds On (Max) @ Id, Vgs 235 mOhm @ 8A, 10V
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Part Status Active
Manufacturer Infineon Technologies
Series HEXFET®
Vgs(th) (Max) @ Id 5.5V @ 250µA
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Tube
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
FET Feature Standard
Supplier Device Package IPAK (TO-251)
Gate Charge (Qg) @ Vgs 38nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Through Hole
Input Capacitance (Ciss) @ Vds 830pF @ 25V
ECCN EAR99
Datasheet:
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