SI2369DS-T1-GE3 specifications -Ameya360 electronic components purchase network

SI2369DS-T1-GE3


SI2369DS-T1-GE3

ACTIVE TO-236 EAR99
Product description : Single P-Channel 30 V 0.04 Ohm 17 nC 1.25 W Silicon SMT Mosfet - SOT-23
SPQ：1
Datasheet : SI2369DS-T1-GE3.pdf
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FET Feature	Standard
Package / Case	TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	7.6A (Tc)
FET Type	MOSFET P-Channel, Metal Oxide
Series	TrenchFET®
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	1295pF @ 15V
RoHS	Lead free / RoHS Compliant
Rds On (Max) @ Id, Vgs	29 mOhm @ 5.4A, 10V
Power - Max	2.5W
Supplier Device Package	TO-236
Gate Charge (Qg) @ Vgs	36nC @ 10V
Online Catalog	P-Channel Logic Level Gate FETs
Family	FETs - Single
Vgs(th) (Max) @ Id	2.5V @ 250µA
Packaging	Tape & Reel (TR)
ECCN	EAR99

Datasheet： SI2369DS-T1-GE3.pdf

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Stock code :	10915
Mfg name :	Vishay
MPN :	SI2369DS-T1-GE3
Product description :	Single P-Channel 30 V 0.04 Ohm 17 nC 1.25 W Silicon SMT Mosfet - SOT-23

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