BSC190N15NS3 G specifications -Ameya360 electronic components purchase network


BSC190N15NS3 G

ACTIVE
Product description : MOSFET N-CH 150V 50A TDSON-8
SPQ：1
Datasheet : BSC190N15NS3 G.pdf
ECAD Model:

Width:	6.35 mm
Rds On - Drain-Source Resistance:	19 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TDSON-8
Height:	1.1 mm
Vgs - Gate-Source Voltage:	20 V
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	15 ns
Forward Transconductance - Min:	57 S, 29 S
Series:	OptiMOS 3
Factory Pack Quantity:	5000
Brand:	Infineon Technologies
Typical Turn-Off Delay Time:	25 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	150 V
Type:	OptiMOS 3 Power-Transistor
Maximum Operating Temperature:	+ 150 C
Packaging:	Reel
Qg - Gate Charge:	23 nC
Pd - Power Dissipation:	125 W
Tradename:	OptiMOS
Vgs th - Gate-Source Threshold Voltage:	3 V
Configuration:	Single
Mounting Style:	SMD/SMT
Fall Time:	6 ns
Length:	5.35 mm
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Part # Aliases:	BSC190N15NS3GATMA1 BSC190N15NS3GXT SP000416636
RoHS:	Details
Id - Continuous Drain Current:	50 A
Rise Time:	53 ns
Transistor Type:	1 N-Channel

Datasheet： BSC190N15NS3 G.pdf

You can comment after logging in.

Please inform us of the error for improving our site and products.

Type of Error

	Product description/Specifications
	Image
	Data sheet
	Search
	Associated/Alternative Product
	Prices
	Other

Explanation (Character Limit: 500)

Name:

Email(We may contact you about this problem.)

placeholder

PART	Quantity*	Target Price
	Quantity MOQ:	Target Price $ If not sure, you may skip this
remark

placeholder

PART	Quantity*	Target Price	Expected LeadTime
	Quantity	Target Price $ If not sure, you may skip this	Expected LeadTime If not sure, you may skip this
remark