BSC190N15NS3 G
  • ACTIVE
Product description : MOSFET N-CH 150V 50A TDSON-8
SPQ:5000
Datasheet :
  • Specifications
  • Product Attributes
  • Documents
  • Product reviews
Width: 6.35 mm
Rds On - Drain-Source Resistance: 19 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: TDSON-8
Height: 1.1 mm
Vgs - Gate-Source Voltage: 20 V
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 15 ns
Forward Transconductance - Min: 57 S, 29 S
Series: OptiMOS 3
Factory Pack Quantity: 5000
Brand: Infineon Technologies
Typical Turn-Off Delay Time: 25 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 150 V
Type: OptiMOS 3 Power-Transistor
Maximum Operating Temperature: + 150 C
Packaging: Reel
Qg - Gate Charge: 23 nC
Pd - Power Dissipation: 125 W
Tradename: OptiMOS
Vgs th - Gate-Source Threshold Voltage: 3 V
Configuration: Single
Mounting Style: SMD/SMT
Fall Time: 6 ns
Length: 5.35 mm
Manufacturer: Infineon
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: BSC190N15NS3GATMA1 BSC190N15NS3GXT SP000416636
RoHS:  Details
Id - Continuous Drain Current: 50 A
Rise Time: 53 ns
Transistor Type: 1 N-Channel
You can comment after logging in.