| IPD036N04LGBTMA1 | ||
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| 产品描述：
Single N-Channel 40 V 3.6 mOhm 59 nC OptiMOS™ Power Mosfet - DPAK
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| 标准包装：2500 | ||
| 数据手册： -- | ||
| ECAD模型:
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| Width: | 6.22 mm |
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| Rds On - Drain-Source Resistance: | 3 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-252-3 |
| Height: | 2.41 mm |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 6 ns |
| Length: | 6.73 mm |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | G IPD036N04L IPD036N04LGXT SP000387945 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 90 A |
| Rise Time: | 5.4 ns |
| Maximum Operating Temperature: | + 175 C |
| Packaging: | Reel |
| Qg - Gate Charge: | 78 nC |
| Pd - Power Dissipation: | 94 W |
| Tradename: | OptiMOS |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Configuration: | 1 N-Channel |
| Unit Weight: | 0.139332 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 9.3 ns |
| Forward Transconductance - Min: | 85 S |
| Series: | XPD036N04 |
| Factory Pack Quantity: | 2500 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 37 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
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