GaN semiconductor specialist Exagan forms Taiwan subsidiary

发布时间:2018-10-19 00:00
作者:Ameya360
来源:electroiq
阅读量:887

Exagan, an innovator of gallium nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, has established Exagan Taiwan Ltd. with a new sales and applications center in Taiwan – the company’s first step in its global market deployment – to accelerate the development and use of fast, intelligent GaN power solutions in the region.

The facility in Taipei’s Nankang Software Park officially opened today during ceremonies attended by Exagan’s president and CEO Frédéric Dupont, COO Fabrice Letertre and Asia sales director Ralf Kilguss. Kilguss is heading up regional sales in Asia, leveraging his 20 years of experience in the semiconductor and power electronics markets.

“With this new application center, our company experts will be able to work closely with local customers on evaluating and designing GaN-based solutions while speeding the technology’s adoption in the rapidly growing charger and server sectors, which are being driven by a very dynamic Asian market,” Dupont said.

Since its creation in 2014, Exagan has developed multiple partnerships in Asia to support its product design, development and manufacturing, thus establishing a robust supply chain with proven solutions for the targeted markets.

Earlier this year, Exagan launched its safe, powerful G-FET™ power transistors and G-DRIVE™ intelligent and fast-switching solution featuring an integrated driver and transistor in a single package. These are designed for easy system implementation in applications including servers and USB chargers.

The number of devices with at least one USB type C port for the simultaneous transfer of electrical power, data and video is forecasted to grow to nearly five billion units by 2021, according to market research firm IHS Markit, while total server shipments are expected to expand at a CAGR of 14 percent over the period of 2018 to 2023, as forecasted by Digitimes Research.

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